ICP-Plasma Source

   

specification

[Features]
High density plasma creation.
High dissociation of gas species.
Low damage by ion bombardment due to low ion energy.
Independent energy distribution from applied RF power.
High SP3 Content DLC source.
[Application]
PECVD with high deposition rate for nc-Si, μc-Si, SiO2, ZnO, Al2O3.
Surface activation prior to Organic EL film deposition.
Low damage etching.
Protective DLC film with high SP3 Content.
Low friction and durable layer formation for lubrication.

Characteristics of COPRA Source
Ion Energy vs. RF-Power

Ion Current Density vs. RF-Power

Ion Energy Distribution

COPRA DN250 GT

COPRA DN400

COPRA LS9